Cmos Compatible Soi Mesfets for Extreme Environment Electronics
نویسندگان
چکیده
Silicon-on-insulator MESFETs have been fabricated using standard CMOS process flows and their characteristics have been measured over a temperature range of –180°C to + 300°C. From the measured data a TOM3 Spice model has been extracted. The Spice model has been used to simulate a two-stage operational transconductance amplifier and a voltage controlled oscillator. The circuit simulations show good performance over a temperature range consistent with lunar missions. In addition, MESFETs fabricated using a government SOI CMOS foundry demonstrate good radiation tolerance up to 5 Mrad(Si).
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